SSD|SAMSUNG|9100 PRO|4TB|M.2|PCIe Gen5|NVMe|TLC|Write speed 13400 MBytes/sec|Read speed 14800 MBytes/sec|2.38mm|TBW 2400 TB|MZ-VAP4T0BW
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Cena bez PVN 21%: €772,89
Specifikācija
| Vienības kastes platums | 0.095 kg |
| Vienības kastes garums | 0.145 kg |
| Vienības kastes augstums | 0.02 kg |
| Modelis | MZ-VAP4T0BW year(s) |
| SSD sērija | 9100 PRO year(s) |
| Units per Shipping Box | 10 year(s) |
| Unit Calculated Volume | 0.0006216 cubm |
| Unit Calculated Weight | 0.0871 kg |
| Summary | Samsung 9100 PRO PCIe® 5.0 NVMe™ M.2 SSD - 4 TB. SSD capacity: 4 TB, SSD form factor: M.2, Read speed: 14800 MB/s, Write speed: 13400 MB/s, Component for: PC/Game console kg |
| Component for | PC/Game console kg |
| Hardware encryption | Jā kg |
| Interface | PCI Express 5.0 kg |
| Memory type | V-NAND TLC h |
| NVMe | Jā h |
| NVMe version | 2.0 h |
| PCI Express interface data lanes | x4 h |
| Random read (4KB) | 2200000 IOPS |
| Random write (4KB) | 2600000 IOPS |
| SSD capacity | 4000 GB |
| SSD form factor | M.2 GB |
| Operating temperature (T-T) | 0 - 70 °C |
| DevSlp (device sleep) support | Jā kg |
| Mean time between failures (MTBF) | 1500000 h |
| Read speed | 14800 MB/s |
| S.M.A.R.T. support | Jā MB/s |
| TRIM support | Jā GB |
| Write speed | 13400 MB/s |
| Operating voltage | 3.3 V |
| Depth | 2.38 mm |
| Height | 22.15 mm |
| Weight | 9 g |
| Width | 80.15 mm |
| M.2 SSD size | 2280 (22 x 80 mm) kg |
| Warranty period | 5 year(s) |
| Package type | Box mm |
| Operating shock | 1500 G |
| Average power consumption (read) | 9 W |
| Average power consumption (write) | 8.2 W |
| Security algorithms | 256-bit AES MB/s |
Apraksts
Breakthrough PCIe® 5.0 performance
Push PCIe® 5.0 performance to the max. 9100 PRO achieves lightning-fast sequential read/write speeds up to 14,800/13,400 MB/s, two times faster than 990 PRO. Leave Gen4 limits behind with random read/write speeds up to 2,200K/2,600K IOPS, only possible by Gen5.
Impressive processing power
Speed past productivity limits. Exhilarating random read/write speeds enable ultra-fast parallel processing for countless fragmented data, at up to 2,200K/2,600K IOPS. Experience superior output and instant loads for huge games, high-performance tasks, and even AI applications.
Rapid AI creation
Intelligence redefines performance. Defy your limits in work and play with an on-board AI PC and AI content generation, fuelled by 9100 PROs exhilarating random read/write speeds up to 2,200K/2,600K IOPS. Swift loads, smooth gameplay, seamless performance.
Exceptional performance at your fingertips
Elevate your competitive edge. Breeze through video editing, 3D art, and even long streaming sessions with the latest PCIe® 5.0 interfaces. Experience cutting-edge performance anytime, anywhere, on any device, and choose the storage you need with expansive capacity up to 8TB.
Extraordinary thermal efficiency
Peak performance, uninterrupted. The advanced 5nm controller power architecture enhances power efficiency up to 49% over 990 PRO. Exceptional thermal control ensures nothing disrupts your flow, so you can keep the most demanding programs running with the max possible power of PCIe® 5.0.
Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
PCIe® 5.0 Performance
Max 14,800/13,400 MB/s sequential speeds,two times faster than 990 PRO.
Advance your gameplay
Mega capacity with exceptional compatibility.
Innovative Power & Thermal Control
Up to 49% enhanced power efficiency with advanced thermal control.
- Samsung NVMe SSD powered by V-NAND technology
- Up to 14,800 MB/s sequential read and 13,400 MB/s write speed
- Upto 2,200K IOPS random read and 2,600K IOPS random write speed
